WORKSHOP WS1 – Monte Carlo simulation: Beyond Moore’s Law
This workshop will take place during Monday morning (September, 5th) at Granada Conference Center (same venue of SISPAD 2022). Registration fee is 60 Eur and it covers attendance to the workshop, lunch (after the workshop) and coffee break. Participants can choose to register to this workshop in conjunction with WS2, benefiting from a combined registration cost of only 70 Eur. The combined registration includes attendance to both workshops, lunch and two coffee breaks.
The registration procedure will be outlined once the regular registration for SISPAD becomes available.
OBJECTIVES OF THE WORKSHOP
The Monte Carlo simulation approach is widely conceived as a powerful solution in comparison to other semiconductor simulation tools. Some distinctive characteristics are:
- It provides manageable simulation times compared to entirely quantum solvers.
- It allows a more accurate description of physical processes compared to classical simulators.
- Contrary to TCAD tools, it offers the possibility of including appropriate corrections for the study of quantum effects of nanoscale transistors.
- It helps unveil physical insight of what is happening inside the device, providing valuable information for defining optimization strategies.
The presentations included in the workshop will provide an overview of the Monte Carlo technique for the simulation of nanodevices going from general strategies, through the description of specific processes (like scattering mechanisms or tunnelling phenomena), and reaching more complex approaches (such as Kinetic Monte Carlo or Wigner Monte Carlo).
The workshop is organized by C. Medina-Bailon and C. Sampedro (University of Granada). Financial support for the workshop organization has been obtained by C. Medina-Bailon (Univ. of Granada) from the Juan de la Cierva Incorporación Fellowship Program under grant agreement No. IJC2019-040003-I (MICINN/AEI).
Invited speakers cover the industrial and academic domain of research according to the following program:
| Time |
Speaker |
Title |
|---|---|---|
| 9:00 | C. Medina-Bailon (Univ. of Granada, Spain) | General welcome |
| 9:10 | A. Asenov (Univ. of Glasgow, Scotland) | The role of transport Monte Carlo simulations in Advanced CMOS TCAD |
| 9:40 | H. Kosina (TU Wien, Austria) | Recent Developments in Semiclassical Transport: Backward Monte Carlo and Electron-Electron Scattering |
| 10:10 | C. Sampedro (Univ. of Granada, Spain) | Quantum corrections in EMC: From Multisubband to quantum transport |
| 10:40 | Craig Alexander (Synopsys, UK) | Monte Carlo Transport Simulation – High Performance Logic and Beyond |
| 11:10 |
C O F F E E B R E A K |
|
| 11:40 | V. Georgiev (Univ. of Glasgow, Scotland) | Multi-scale simulations of novels electronic devices with KMC methods |
| 12:10 | M. Ballicchia (TU Wien, Austria) | Monte Carlo approach for solving integral equations: From classical-Boltzmann to quantum-Wigner particles |
| 12:40 | L. Filipovic (TU Wien, Austria) | ViennaEMC: A Broadly-Applicable Ensemble Monte Carlo Framework |
| 13:10 | M. V. Fischetti (Univ. of Texas at Dallas, USA) | Electronic transport in supported and gated two-dimensional materials: An ab initio Monte Carlo study |
| 13:40 |
L U N C H |