INVITED TALK

Tuesday 20

11:30-12:00 3D scaling of Si-IGBT

H. Iwai1, K. Kakushima1, T. Hoshii1, K. Tsutsui1, A. Nakajima2, S. Nishizawa3, H. Wakabayashi1, I. Muneta1, K. Sato4, T. Matsudai5, W. Saito5, T. Saraya6, K. Itou5, M. Fukui6, S. Suzuki6, M. Kobayashi6, T. Takakura6, T. Hiramoto6, A. Ogura7, Y. Numasawa7, I. Omura8, and H. Ohashi1

1Tokyo Institute of Technology, Yokohama, Japan
2Nat. Inst. Advanced Industrial Science and Technology, Tsukuba, Japan
3Kyushu University, Fukuoka, Japan
4Mitsubishi Electric Corp., Fukuoka, Japan
5Toshiba Electronic Devices & Storage Corp.,Tokyo, Japan
6The University of Tokyo, Tokyo, Japan
7Meiji University, Kawasaki, Japan
8Kyushu Inst. of Technology,Kitakyushu, Japan