Fabrication and Process Characterization
Monday 19
| 10:00 – 10:20 | Epitaxial Growth of BeO-on-GaN using Atomic Layer Deposition
Seung Min Lee1,2, Jung Hwan Yum3,4, Eric S. Larsen3,4, Christopher W. Bielawski3,4 and Jungwoo Oh1,2 1School of Integrated Technology, Yonsei University, Incheon 21983, Republic of Korea 2Yonsei Institute of Convergence Technology, Incheon 21983, Republic of Korea 3CMCM, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea 4Department of Chemistry, UNIST, Ulsan 44919, Republic of Korea |
| 10:20 – 10:40 | Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect
R. Daubriac1, E. Scheid1, S. Joblot2, R. Beneyton2, P. Acosta Alba3, S. Kerdilès3, F. Cristiano1 1LAAS, CNRS and Univ. of Toulouse, 7 av. Du Col. Roche, 31400 Toulouse, France 2STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France 3CEA-LETI and Univ. of Grenoble, 17 rue des Martyrs, 38054 Grenoble, France |
| 10:40 – 11:00 | Doping profile extraction in thin SOI films: application to A2RAM
F. Tcheme Wakam1,2, J. Lacord1, M. Bawedin2, S. Martinie1, S. Cristoloveanu2, J.-Ch. Barbe1. 1CEA-LETI, 17 rue des Martyrs, 38054 Grenoble, Cedex 9, France. 2Univ. Grenoble Alpes, IMEP-LAHC, Grenoble INP Minatec, CNRS, F-38000 Grenoble, France. |