Memories II

Tuesday 20

12:00 – 12:20 The Role of the Bottom and Top Interfaces in the 1st Reset Operation in HfO2 based RRAM Devices

Eduardo Perez1, Mamathamba Kalishettyhalli Mahadevaiah1, Christian Wenger1 Cristian Zambelli2 and Piero Olivo2

 1IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

2Dip. di Ingegneria, Università degli Studi di Ferrara, Via Giuseppe Saragat 1, 44122 Ferrara, Italy

12:20 – 12:40 A Flexible Characterization Methodology of RRAM: Application to the Modelling of Conductivity Changes

M. Pedro, J. Martin-Martinez, R. Rodriguez and M. Nafria

Departament d’Enginyeria Electrònica Universitat Autònoma de Barcelona (UAB), Spain

12:40 – 13:00 Investigation of SiGe channel introduction in FDSOI SRAM cell pFET and assessment of the Complementary-SRAM

R. Berthelon1,2, F. Andrieu1, B. Giraud1, O. Rozeau1, O. Weber1, F. Arnaud2 and M. Vinet1

 1CEA-LETI, Minatec campus, 17 rue des Martyrs, 38054 Grenoble, France 2STMicroelectronics, 850 rue Jean Monnet, F38926 Crolles, France