New Materials and Devices II
Tuesday 20
| 15:00 – 15:20 | Ferroelectric properties of HfO2 interlayers in SOI and SOS pseudo-MOSFETs
V.P. Popov1, V.A. Antonov1, M.A. Ilnitskii1, V.I. Vdovin1, I.E. Tyschenko1, A.V. Miakonkikh2, K.V. Rudenko2 1Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia 2Institute of Physics and Technology RAS, Moscow, Russia |
| 15:20 – 15:40 | Random Discrete Dopant Induced Variability in Negative Capacitance Transistors
T. Dutta, V. Georgiev, A. Asenov Device Modeling Group, University of Glasgow,Glasgow G128LT, Scotland, UK |
| 15:40 – 16:00 | Steep Slope Negative Capacitance FDSOI MOSFETs with Ferroelectric HfYOX
Qinghua Han, Thomas Carl Ulrich Tromm, Juergen Schubert, Siegfried Mantl, and Qing-Tai Zhao Peter Grünberg Institute (PGI-9) and JARA-FIT, Forschungszentrum Juelich, 52428 Juelich, Germany |