New Materials and Devices II

Tuesday 20

15:00 – 15:20 Ferroelectric properties of HfO2 interlayers in SOI and SOS pseudo-MOSFETs

V.P. Popov1, V.A. Antonov1, M.A. Ilnitskii1, V.I. Vdovin1, I.E. Tyschenko1, A.V. Miakonkikh2, K.V. Rudenko2

1Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia

2Institute of Physics and Technology RAS, Moscow, Russia

15:20 – 15:40 Random Discrete Dopant Induced Variability in Negative Capacitance Transistors

T. Dutta, V. Georgiev, A. Asenov

Device Modeling Group, University of Glasgow,Glasgow G128LT, Scotland, UK

15:40 – 16:00 Steep Slope Negative Capacitance FDSOI MOSFETs with Ferroelectric HfYOX

Qinghua Han, Thomas Carl Ulrich Tromm, Juergen Schubert, Siegfried Mantl, and Qing-Tai Zhao

Peter Grünberg Institute (PGI-9) and JARA-FIT, Forschungszentrum Juelich, 52428 Juelich, Germany