Magnetism
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10:20 – 10:40 |
A novel ferroelectric nanopillar multi-level cell memory Hyeongu Lee and Mincheol Shin School of Electrical Engineering, Korea Advanced Institute of Science and Technology (Republic of Korea) |
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10:40 – 11:00 |
Semi-empirical and VerilogA compatible compact model for ferroelectric hysteresis behavior M. Lederer1, R. Olivo1, N. Yadav1, S. De1, K. Seidel1, L. M. Eng2 and T. Kämpfe1 1Fraunhofer IPMS, CNT (Germany) 2TU Dresden (Germany) |
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11:00 – 11:20 |
New Insights into the Effect of Spatially Distributed Polarization in Ferroelectric FET on Content Addressable Memory Operation for Machine Learning Applications Chang Su1, Weikai Xu1, Qianqian Huang1,2, Lining Zhang3 and Ru Huang1,2 1School of Integrated Circuits, Peking University (China) 2National Key Laboratory of Science and Technology on Micro/Nano Fabrication (China) 3School of Electronic and Computer Engineering, Peking University (China) |
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11:20 – 11:40 |
Comprehensive Evaluation of Torques in Ultra Scaled MRAM Devices Simone Fiorentini1,2, Johannes Ender1,2, Roberto L. de Orio2, Siegfried Selberherr2, Wolfgang Goes3 and Viktor Sverdlov1,2 1Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the 2Institute for Microelectronics, TU Wien (Austria) 3Silvaco Europe Ltd., Cambridge (United Kingdom) |