TCAD Models
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16:30 – 16:50 |
Hierarchical Modeling for TCAD Simulation of Short-Channel 2D Material-Based FETs Luca Silvestri1, Mattias Palsgaard2, Reto Rhyner1, Martin Frey1, Jess Wellendorff2, Søren Smidstrup2, Ronald Gull1 and Karim El Sayed3 1Synopsys Switzerland LLC (Switzerland) 2Synopsys Denmark ApS (Denmark) 3Synopsys Inc. (USA) |
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16:50 – 17:10 |
Modeling of SiC Transistor with Counter-doped Channel Pratik B. Vyas, Ashish Pal, Stephen Weeks, Joshua Holt, Aseem K. Srivastava, Ludovico Megalini, Siddarth Krishnan, Michael Chudzik, El Mehdi Bazizi, and Buvna Ayyagari-Sangamalli Applied Materials (USA) |
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17:10 – 17:30 |
Towards a DFT-based layered model for TCAD simulations of MoS2 L. Donetti, C. Marquez, C. Navarro, C. Medina-Bailon, J. L. Padilla, C. Sampedro and F. Gamiz Departamento de Electrónica and CITIC, Universidad de Granada (Spain) |