High-Frequency Devices
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10:20 – 10:40 |
Massively Parallel FDTD Full-Band Monte Carlo Simulations of Electromagnetic THz pulses in p-doped Silicon at Cryogenic Temperatures C. Jungemann1, F. Meng2, M. D. Thomson2 and H. G. Roskos2 1Chair of Electromagnetic Theory, RWTH Aachen University (Germany) 2Physikalisches Institut, Goethe-Universität Frankfurt (Germany) |
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10:40 – 11:00 |
TCAD simulation of microwave circuits: the Doherty amplifier S. Donati Guerrieri, E. Catoggio and F. Bonani Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino (Italy) |
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11:00 – 11:20 |
TCAD-Based RF Performance Prediction and Process Optimization of 3D Monolithically Stacked Complementary FET Shu-Wei Chang1, Jia-Hon Chou2, Wen-Hsi Lee1, Yao-Jen Lee3 and Darsen D. Lu4 1Department of Electrical Engineering, National Cheng Kung University (Taiwan) 2M.S. Degree Program on Nano-IC Engineering, Department of Electrical Engineering, National Cheng Kung University (Taiwan) 3Department of Electrical Engineering, National University of Kaohsiung (Taiwan) 4Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University (Taiwan) |
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11:20 – 11:40 |
THz Gain Compression in Nanoscale FinFETs Mathias Pech and Dirk Schulz Chair for High Frequency Techniques TU Dortmund (Germany) |