Atomistic and Ab-initio Modeling
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11:50 – 12:10 |
Ab initio study of electron mobility in V2O5 via polaron hopping R. Defrance1,2, B. Sklénard1, M. Guillaumont2, J. Li1 and M. Freyss3 1Univ. Grenoble Alpes, CEA, Leti (France) 2LYNRED, 364 Avenue de Valence, (France) 3CEA, DES, IRESNE, DEC (France) |
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12:10 – 12:30 |
Efficient Atomistic Simulations of Lateral Heterostructure Devices with Metal Contacts Mincheol Shin and Kanghyun Joo School of Electrical Engineering, Korea Advanced Institute of Science and Technology (Rep. of Korea) |
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12:30 – 12:50 |
Impact of random alloy fluctuations on carrier transport in (In,Ga)N quantum well systems: Linking atomistic tight-binding models to drift-diffusion M. O’Donovan1,2, P. Farrell3, T. Streckenbach3, T. Koprucki3 and S. Schulz2,1 1Tyndall National Institute, University College Cork (Ireland) 2Department of Physics, University College Cork (Ireland) 3Weierstrass Institute (WIAS) (Germany) |
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12:50 – 13:10 |
Robust Cryogenic Ab-initio Quantum Transport Simulation for LG=10nm Nanowire Tom Jiao and Hiu Yung Wong Electrical Engineering, San Jose State University (USA) |