Memories
|
11:50 – 12:10 |
A Physical Model for Long Term Data Retention Characteristics in 3D NAND Flash Memory Rashmi Saikia and Souvik Mahapatra Department of Electrical Engineering, Indian Institute of Technology Bombay (India) |
|
12:10 – 12:30 |
An Atomistic Modelling Framework for Valence Change Memory Cells M. Kaniselvan, M. Luisier and M. Mladenovic Integrated Systems Laboratory, ETH Zurich (Switzerland) |
|
12:30 – 12:50 |
An inner gate as enabler for vertical pitch scaling in macaroni channel gate-all-around 3-D NAND flash memory D. Verreck, A. Arreghini, G. Van den Bosch and M. Rosmeulen Imec (Belgium) |
|
12:50 – 13:10 |
Insights into Few-Atom Conductive Bridging Random Access Memory Cells with a Combined Force-Field / ab initio Scheme J. Aeschlimann, M. H. Bani-Hashemian, F. Ducry, A. Emboras and M. Luisier Integrated Systems Laboratory, ETH Zürich (Switzerland) |