Session 8B

Room AndalucĂ­a 3.


Reliability II

11:50 – 12:10

A Dynamic Current Hysteresis Model for Thin-Film Transistors
Yu Li1, Xiaoqing Huang1, Congwei Liao1, Runsheng Wang2, Shengdong Zhang1, Lining Zhang1, Ru Huang2
1School of ECE, Peking University (China)
2School of Integrated Circuits Peking University (China)

12:10 – 12:30

Analysis of 1/f and G-R Noise in Phosphorene FETs
Adhithan Pon and Avirup Dasgupta
DiRac Lab, Department of ECE, Indian Institute of Technology (India)

12:30 – 12:50

Microstructural Impact on Electromigration Reliability of Gold Interconnects
H. Ceric, R. L. de Orio and S. Selberherr
Institute for Microelectronics, TU Wien (Austria)

12:50 – 13:10

Reliability of TCAD Study for HfO2-doped Negative Capacitance FinFET with Different Material Specific Dopants
Rajeewa Kumar Jaisawal, Sunil Rathore, P.N. Kondekar, and Navjeet Bagga
VLSI Design and Nano-scale Computational Lab, Electronics and Communication Engineering Department, PDPM-IIITDM (India)