High-quality contributions in the following areas are solicited:

  • Modeling and simulation of all types of semiconductor devices, including FinFETs, GAA FETs, ultra-thin SOI devices, emerging memory devices, new material-based nanodevices, optoelectronic devices, TFTs, sensors, power electronic devices, spintronic devices, tunnel FETs, SETs, organic electronic devices, and bioelectronic devices
  • Modeling and simulation of all sorts of semiconductor processes, including first principles material design, and growth simulation of nano-scale fabrication
  • Fundamental aspects of device modeling and simulation, including quantum transport, thermal transport, fluctuation, noise, and reliability
  • Compact modeling for circuit simulation, including low-power, high frequency, and power electronics applications
  • Process/device/circuit co-simulation in context with system design and verification
  • Equipment, topography, lithography modeling
  • Interconnect modeling, including noise and parasitic effects
  • Numerical methods and algorithms, including grid generation, user-interface, and visualization
  • Metrology for the modeling of semiconductor devices and processes
  • Multiscale approach from First Principles to TCAD simulations
  • Estimation with TCAD and machine learning
  • Neuromorphic devices and quantum computing
  • Multi-physics simulation

Abstract submission instructions

To submit an abstract it is necessary to create a user on the conference platform by following this link. After that, you will find the “Submit a Paper” button in your personal information panel.

  • Abstracts are limited to two A4 pages including tables and figures.
  • Abstracts must be submitted in PDF format.
  • Abstracts sent by e-mail or postal mail will NOT be considered

The abstract submission deadline is April 8.

The abstract submission period has been extended: the updated deadline is April 22  (at midnight, Anywhere on Earth AoE time zone).