High-quality contributions in the following areas are solicited:
- Modeling and simulation of all types of semiconductor devices, including FinFETs, GAA FETs, ultra-thin SOI devices, emerging memory devices, new material-based nanodevices, optoelectronic devices, TFTs, sensors, power electronic devices, spintronic devices, tunnel FETs, SETs, organic electronic devices, and bioelectronic devices
- Modeling and simulation of all sorts of semiconductor processes, including first principles material design, and growth simulation of nano-scale fabrication
- Fundamental aspects of device modeling and simulation, including quantum transport, thermal transport, fluctuation, noise, and reliability
- Compact modeling for circuit simulation, including low-power, high frequency, and power electronics applications
- Process/device/circuit co-simulation in context with system design and verification
- Equipment, topography, lithography modeling
- Interconnect modeling, including noise and parasitic effects
- Numerical methods and algorithms, including grid generation, user-interface, and visualization
- Metrology for the modeling of semiconductor devices and processes
- Multiscale approach from First Principles to TCAD simulations
- Estimation with TCAD and machine learning
- Neuromorphic devices and quantum computing
- Multi-physics simulation
Abstract submission instructions
To submit an abstract it is necessary to create a user on the conference platform by following this link. After that, you will find the “Submit a Paper” button in your personal information panel.
- Abstracts are limited to two A4 pages including tables and figures.
- Abstracts must be submitted in PDF format.
- Abstracts sent by e-mail or postal mail will NOT be considered
The abstract submission deadline is April 8.
The abstract submission period has been extended: the updated deadline is April 22 (at midnight, Anywhere on Earth AoE time zone).