Process Simulation
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14:30 – 14:50 |
3D Feature-Scale Modeling of Highly Selective Fluorocarbon Plasma Etching Frâncio Rodrigues1, Luiz Felipe Aguinsky1, Andreas Hössinger2 and Josef Weinbub1 1Christian Doppler Laboratory for High Performance TCAD at the Institute for Microelectronics, TU Wien (Austria) 2Silvaco Europe Ltd. (United Kingdom) |
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14:50 – 15:10 |
DTCO Flow for Air Spacer Generation and its Impact on Power and Performance at N7 L. Filipovic1, O. Baumgartner2, J. Piso1, J. Bobinac1, T. Reiter1, G. Strof2, G. Rzepa2, Z. Stanojevic2 and M. Karner2 1Institute for Microelectronics, TU Wien, 1040 Vienna, Austria 2Global TCAD Solutions GmbH., 1010 Vienna, Austria |
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15:10 – 15:30 |
GPGPU MCII for high-energy implantation Fumie Machida1, Hiroo Koshimoto1, Yasuyuki Kayama1, Alexander Schmidt2, Inkook Jang2, Satoru Yamada1 and Dae Sin Kim2 1DS2 Lab, DS center, Samsung R&D Institute Japan (Japan) 2CSE Team, Innovation Center, Samsung Electronics Co., Ltd. (Korea) |
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15:30 – 15:50 |
Modeling Electrical Resistivity of CrSi Thin Films K. Sonoda1, N. Shiraishi2, K. Maekawa1, N. Ito1, E. Hasegawa2 and T. Ogata1 1Renesas Electronics Corporation, Ibaraki (Japan) 2Renesas Electronics Corporation, Kumamoto (Japan) |
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15:50 – 16:10 |
Modeling Non-Ideal Conformality during Atomic Layer Deposition in High Aspect Ratio Structures Luiz Felipe Aguinsky1, Frâncio Rodrigues1, Xaver Klemenschits2, Lado Filipovic2, Andreas Hössinger3 and Josef Weinbub1 1Christian Doppler Laboratory for High Performance TCAD at the 2Institute for Microelectronics, TU Wien (Austria) 3Silvaco Europe Ltd. (United Kingdom) |