WORKSHOP WS2 – Modeling and characterization of 2D materials for More than Moore applications

This workshop will take place during Monday afternoon (September, 5th) at Granada Conference Center (same venue of SISPAD 2022). Registration fee is 60 Eur and it covers attendance to the workshop, lunch (before the workshop) and coffee break. Participants can choose to register to this workshop in conjunction with WS1, benefiting from a combined registration cost of only 70 Eur. The combined registration includes attendance to both workshops, lunch and two coffee breaks.

The registration procedure will be outlined once the regular registration for SISPAD becomes available.


Since the discovery and isolation of graphene has been awarded with The Nobel Prize in Physics, Two-dimensional (2D) materials have received an outstanding attention for electronic, optics and photonic applications. Incorporating 2D materials has demonstrated an optimal electrostatic control of the channel thanks to their reduced thickness. Moreover, promising levels of immunity to short channel effects, high ON/OFF ratios, reduced power consumption, low current leakage and short switching delay are expected according to the International Roadmap for Devices and Systems (IRDS) guideline. However, to explore metal chalcogenide mixes and evaluate the potential properties and applications, solid and reliable models are required. “Modeling and characterization of 2D materials for More than Moore applications” presentations from industry and research centers will highlight the most important challenges and will provide insight into capabilities of existing simulation modules for modeling novel 2D materials and devices.

The workshop is organized by C. Marquez and C. Navarro (University of Granada) in cooperation with the H2020 projects TRAPS-2D.

The workshop will comprise presentations from industry and research:

15:00 Carlos Marquez (Universidad de Granada, Spain) Opening talk- 2D materials Roadmap
15:30 Tue Gunst (Synopsys Denmark) Multiscale Atomistic to TCAD Workflow for 2D-FET Engineering
16:00 Theresia Knobloch (IuE, TU Wien, Austria) Enhancing the Reliability of 2D Nanoelectronics Guided by Physical Modeling
C O F F E E      B R E A K
17:00 Lida Ansari (Tyndall National Institute, Ireland) Semimetal-based TMDs for beyond CMOS
17:30 François Triozon (LETI, France) Simulation of electron transport in 2D layers and through metal/2D/metal stacks
18:00 Francisco Gámiz (Universidad de Granada) More-than-Moore applications of 2D materials