New Materials and Devices I
Tuesday 20
| 10:00 – 10:20 | Monomaterial Schottky Junction based on Semimetals
Farzan Gity1, Lida Ansari1, Martin Lanius2, Peter Schüffelgen2, Gregor Mussler2, Detlev Grützmacher2, and J. C. Greer1,3 1Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork T12 R5CP, Ireland 2Peter Grünberg Institute 9 and Jülich Aachen Research Alliance (JARA-FIT), Research Center Jülich, 52425 Jülich, Germany 3University of Nottingham Ningbo China, 199 Taikang Road, Ningbo, 315100, China |
| 10:20 – 10:40 | Large Area Growth of Non-intentionally Doped MoS2 in a 300mm Atomic Layer Deposition Reactor
Jun Lin1, Scott Monaghan1, James Connolly1, Farzan Gity1, Michael Schmidt1, Lee A. Walsh1, Teresa Mannarino1, Conor Cullen2, Niall McEvoy2, Georg Duesberg2,3, Roger E. Nagle1, Ian M. Povey1, Paul K. Hurley1 1Tyndall National Institute, University College Cork, Ireland 2CRANN and AMBER Research Centres, Trinity College Dublin, Ireland 3Universität der Bundeswehr, München, Germany |
| 10:40 – 11:00 | Current and Shot Noise at Spin-dependent Hopping in Magnetic Tunnel Junctions
Viktor Sverdlov and Siegfried Selberherr Institute for Microelectronics, TU Wien, Gußhausstraße 27-29, A-1040 Wien, Austria |