Call For Papers
The organizing committee invites scientists and engineers working in the above fields to actively participate by submitting high quality papers. Original 2-page abstracts with illustrations will be accepted for review in pdf format. The authors of the accepted contributions will be requested to provide a 4-page paper to appear in the conference proceedings, which will be submitted to the IEEE Xplore® digital library. The authors of the best papers will be invited to submit a longer version for publication in a special issue of Solid-State Electronics. A best paper award will be attributed to the best paper by the SINANO institute.
Papers in the following areas are solicited:
- Advanced SOI materials and wafers. Physical mechanisms and innovative SOI-like devices
- New channel materials for CMOS: strained Si, strained SOI, SiGe, GeOI, III-V and high mobility materials on insulator; carbon nanotubes; graphene and other two-dimensional materials.
- Properties of ultra-thin films and buried oxides, defects, interface quality. Thin gate dielectrics: high-κ materials for switches and memory.
- Nanometer scale devices: technology, characterization techniques and evaluation metrics for high performance, low power, low standby power, high frequency and memory applications.
- Alternative transistor architectures including FDSOI, DGSOI, FinFET, MuGFET, vertical MOSFET, Nanowires, FeFET and Tunnel FET, MEMS/NEMS, Beyond-CMOS nanoelectronic devices.
- New functionalities in silicon-compatible nanostructures and innovative devices representing the More than Moore domain, nanoelectronic sensors, biosensor devices, energy harvesting devices, RF devices, imagers, etc.
- CMOS scaling perspectives; device/circuit level performance evaluation; switches and memory scaling. Three-dimensional integration of devices and circuits, heterogeneous integration.
- Transport phenomena, compact modeling, device simulation, front- and back-end process simulation.
- Advanced test structures and characterization techniques, parameter extraction, reliability and variability assessment techniques for new materials and novel devices.
- Emerging memory devices.