Characterization
Tuesday 20
| 16:30 – 16:50 | Towards a magnetoresistance characterization methodology for 1D nanostructured transistors
G.A. Umana-Membreno1, N.D. Akhavan1, J. Antoszewski1, L. Faraone1, S. Cristoloveanu2 1Dept.of E. E. & C. Eng., The University of Western Australia, Perth, WA 6009, Australia 2IMEP-LAHC, Grenoble INP Minatec, BP 257, 38016 Grenoble, France |
| 16:50 – 17:10 | 28 FDSOI Analog and RF Figures of Merit at Cryogenic Temperatures
B. Kazemi Esfeh1, M. Masselus1, N. Planes2, M. Haond2, J.-P. Raskin1, D. Flandre1, V. Kilchytska1 1ICTEAM, Université catholique de Louvain, 1348 Louvain-la-Neuve, Belgium 2ST-Microelectronics, 850 rue J. Monnet, 38926 Crolles, France |
| 17:10 – 17:30 | Cryogenic Operation of Ω-Gate p-type SiGe-on-Insulator Nanowire MOSFETs
B. C. Paz1, M. Cassé2, S. Barraud2, G. Reimbold2, M. Vinet2, O. Faynot2 and M. A. Pavanello1 1Centro Universitário FEI, 09850-901 – São Bernardo do Campo – Brazil 2CEA-LETI Minatec, 17 Rue des Martyrs, 38054 – Grenoble – France |
| 17:30 – 17:50 | Experimental measurement on GDNMOS and GDBIMOS devices for ESD protection in 28nm UTBB FD-SOI CMOS technology
Louise De Conti1,2,3, Sorin Cristoloveanu2, Maud Vinet3, Philippe Galy1 1STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles, France 2Univ. Grenoble Alpes, IMEP-LAHC, Grenoble INP Minatec, CNRS, F-38000 Grenoble, France 3CEA LETI, 17 avenue des martyrs, 38054 Grenoble Cedex 9, France |